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1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance
Keywords: Silicon Carbide, High Temperature, Rectifiers
Electrical Characteristics of Industry’s first 1200 V rated SiC Schottky rectifiers, specially designed for operation at ≥ 250 °C are presented. These high-temperature SiC rectifiers fabricated in 1,5, and 20 A current ratings feature reverse leakage currents of < 3 mA/cm2 at 1200 V up to temperatures as high as 300 °C. GeneSiC’s 1200 V/20A SHT rectifier offers a 10x reduction in leakage current and a 23% reduction in junction capacitance when compared to its nearest SiC Schottky rectifier competitor. In addition, these high-temperature Schottky (SHT) rectifiers demonstrate superior surge-current ratings, and temperature-independent switching capability up to their rated junction temperatures. To address the emerging need for high-temperature (>200 °C) capable high-voltage rectifiers in down-hole oil drilling, geothermal instrumentation, aerospace and other military applications, GeneSiC developed the industry’s first 1200 V SiC Schottky rectifiers, specially designed and fabricated for optimum performance at > 200 °C junction temperatures. These high-temperature Schottky (SHT) rectifiers are uniquely designed and fabricated to fully exploit the superior high-temperature capability of the 4H-SiC material. A detailed investigation of the on-state, blocking voltage, switching, capacitance-voltage (C-V), and long-term reliability characteristics of these novel SiC SHT rectifiers are presented in this paper. The SHT Rectifiers presented in this paper are excellent companion diodes for GeneSiC’s SiC “Super” Junction Transistors (SJTs) [1], which offer superior electrical performance over competing SiC transistor technologies (MOSFETs, JFETs) at > 200 °C operating temperatures. Special device designs and fabrication processes were developed at GeneSiC to enable the SiC SHT rectifiers to block their rated voltage, even at temperatures as high as 300 °C. The topside metallization for these SHT rectifiers was formed by either thick Al or Au to be compatible with wire-bonded or fully soldered packaging, respectively. The 1200 V SHT rectifiers were fabricated with three different chip sizes, corresponding to 1 A, 5 A and 20 A current ratings. Selected die were packaged in custom high-temperature test coupons for electrical characterization up to 300 °C.
Ranbir Singh,
GeneSiC Semiconductor Inc.
Dulles, VA
USA


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