Here is the abstract you requested from the IMAPS_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Thick Copper and Aluminium Wire Bonding Technology for High Power Laser Devices|
|Keywords: Thick Wire, Wire Bonding, Aluminim Wire|
|The trends of increasing demand of higher power laser devices with increased current capacity and total package cost reduction to improve dollars per watt of laser output power have resulted in the need for alternatives to traditional gold wirebonds on gold-plated substrates. Copper and aluminium wires are considered to be the leading candidates due to their vast reliability database in the semiconductor industry and cost advantages. Room temperature (25oC) wirebonding with a robust process window and high yield is required for high-volume, low-cost applications. The wirebonds must also meet or exceed the stringent reliability requirements of 1000 hrs at 85oC/85%RH damp heat (DH) and 1000 hrs at 175oC high temperature storage (HTS) testing. In this study, 10 mils round thick copper and aluminium wire bonding have been successfully developed at room temperature with no intermetallic failure or void formation at the Al/Au and Cu/Au interfaces after 1000 hrs of DH and HTS testing. Further investigation with corrosion-resistant Al wire shows excellent pull strength and wire shear per Mil-Std 883 after 2000 hrs of DH and HTS testing with no evidence of void formation at the Al/Au interface. The thickness of the Au-Al intermetallic is found to be minimal and saturated at ~4um after 1000 hrs of HTS testing. This study has demonstrated that both thick copper and aluminium wire are capable of wire bonding at room temperature to function as a reliable interconnect with improved product performance and low cost|
|Kong Weng Lee, Staff Packaging Engineer