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Si Vapor Chamber integrated with through silicon via for 3D Packaging
Keywords: Vapor chamber, Hot spot, 3D Package
We demonstrate a silicon etched vapor chamber integrated with through silicon via (TSV) for a 3D packaging. The vapor chamber consists of wick structure of 30um high, vapor channel of 70um high and TSV. The vapor chamber chip bonded to LSI is functioned as not only hot spot suppressing but also an interconnection between the LSI chips. The first prototype of a vapor chamber embedded glass top cover has been developed. The heat transfer enhancement is successfully demonstrated. The improvement rate of thermal diffusion is 3.6% compared to the test chip without working fluid. Three-dimensional packaging technologies are receiving more attention for system performance enhancements, due to their higher interconnect densities and shorter interconnect lengths. Thermal management is significantly important for high performance and reliability at design and development for such 3D packaging technologies. The generated heat in the logic layer has a localized hot spot. The hot spot in the 3D stacked thin chip structure causes chip destruction because of an increase of leakage current by temperature rise. To suppress the hot spot in 3D packaging, using interlayer micro channel cooling embedded 3D stacked chip is previously provided due to its high cooling performance for very high power densities. However, external power and pump device in the same physical configuration of high-end server are needed to implement stable flow in the micro channel. As a candidate that realizes the thermal management in limited physical configuration, we developed the Si vapor chamber that has potentially low thermal resistance and provides a uniform temperature. The fabrication process of the vapor chamber chip is performed by Si micromachining process. Each of vapor chamber chips is larger overall size than vertically stacked chip on substrate. In the process of the assembly of packaging, the stacked chip structure is attached to a lid structure, typically solid copper or Al-SiC via thermal interface material (TIM) and structural supported by stiffener and adhesive. Not only top of the stacked chip but also outer periphery of vapor chamber chip is attached lid structure via TIM. The vapor from hot spot is mostly moved to condensation area at outer periphery of the vapor chamber chip.
Jun Taniguchi,
Fujitsu laboratories LTD.
Atsugi, Kanagawa

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