Here is the abstract you requested from the IMAPS_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Study of Wirebonding on Thin Al Pads with Various Size Probe Marks|
|Keywords: probe marks, ball bonding, thin pad Al|
|IC bond pads having thin pad aluminum (Al) have been probed by a variety of cantilever probe tips to create a wide range of probe mark areas and depths. Marks were created by experimental high force probe cards with various tip diameters, bend angles, and tip lengths. Bond pads include various ON Semiconductor circuit under pad (CUP) structures which are robust against cracking when compared to traditional pads having Al metallization and silicon dioxide (SiO2) interconnect. Such pads tolerate high force probing and Cu wirebond, even with the thin pad Al. Probing includes both one and two touchdowns (slightly offset to represent a second probing of the wafer). Bondability and bond reliability are evaluated for Au and Cu wirebond over the range of probe marks on two different test ICs. The data is valuable in setting different specifications regarding probe marks in manufacturing as required for pads receiving either Au or Cu wirebond.|
|Stevan Hunter, Principal Reliability Engineer