Here is the abstract you requested from the IMAPS_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Conceptual Development Using 3D Printing Technologies for 8kV SiC Power Module Package|
|Keywords: Printed Power Packaging, 3D Printing, SiC Power Device|
|Post-silicone power devices, such as SiC and GaN, have many advantages over regular silicon power semiconductors, particularly for smaller size and higher thermal densities. Although these devices are in the early stage, there are many already identified applications, like hybrid vehicles and the smart grid. For power packaging, there is now a greater challenge of much higher voltage, faster switching speed and much smaller size (higher densities). All of these issues call for newer approaches in power packaging. The microelectronics area has been developing stacked-3D technologies along with printed-circuit technologies. In particular, 3-D printing can implement complicated structures, such as multilevel interconnects and selective dielectric field enhancements, besides introducing rapid prototyping in the early power-stage design. 3D printing technology, though introduced in the late 1980’s, is now becoming prevalent. Commercial printers can create high-resolution structures in ceramic, metals (e.g. titanium, cooper and aluminum) and polymers. The conceptual designs proposed in this paper will incorporate a hybrid approach of traditional structures overprinted with polymers, and more advanced structures that print metal and ceramic. The designs focus on packaging a 1 sq.cm., 8kV SiC schottky die (under development at the authors’ institution). The chip has a blocking voltage of 10kV with a final target at 15kV. Early use for the packaging, in keeping with rapid prototyping, is to provide a test vehicle for the device, and proving the application of 3D printed materials to high voltage power modules. This talk will not discuss any new formulations, but show characterization of existing materials. This paper will present the necessary requirements for packaging new SiC (1 sq.cm. 10kV, 10A) and GaN (1 sq.cm. 600V, 100A) devices, review device characteristics (which are quickly changing), introduce the use of extruded 3-D printing for a hybrid structure, and use of jetted/extruded layer-by-layer build up for total direct structure creation, characterization of some available dielectric and metal printable materials, and a test methodology for electrical, thermal and mechanical performance. An early-stage example will be shown and extrapolated to higher-level conceptual designs.|
North Carolina State University