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Development of TGV Interposer for 3D IC
Keywords: 3D IC, Interposer, Glass
The emergence of 3D IC has now accelerated to the need of interposer capable high dense I/Os, low electrical loss, and low cost. Traditional organic interposer cannot meet such demands due to poor dimensional stability, CTE mismatch, and lithography limitation [1]. Si interposer using fine technology such as Through Silicon Via (TSV) has driven several demonstration works of 3D integrated packaging, and it has also generated significant attention showing wide field of packaging application using interposer. Obviously the cost of Si interposer is being critical issue especially for applications with large die size due to low efficiency coming from low loading of wafer. Nowadays, glass has been expected to be applied to a core material for larger interposer substrate so called “Glass Interposer” for 3D IC [2, 3]. For the realization of glass interposer, development of Through Glass Via (TGV) technology is the biggest challenge. Fine-pitch and high dense via formation is required. Additionally metallization technology is the key for TGV interposer because it’s one of important parts of industrial supply chain. And metallization for glass has also big development challenges. Furthermore, mechanical and electrical evaluation of TGV is important work as for demonstration of glass interposer substrate. This study will explore the result of fine-pitch TGV formation using focused electrical discharging and metallization technology for alkali-free glass which has good electrical property and scalability as large and thin glass substrate. And the result of mechanical and electrical evaluation of TGV will be reported. This study will also discuss future subjects for TGV interposer towards low-cost interposer for 3D IC.
Shintaro Takahashi,
Asahi Glass Co., Ltd.
Chiyoda-ku, Tokyo
Japan


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