Here is the abstract you requested from the IMAPS_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A Highly Integrated GaAs-based Module for DC-DC Regulators|
|Keywords: power supplies, Galium Arsenide, Embedded die packaging|
|There is a need and desire to push low voltage point-of-load voltage regulators (POL VRs) to higher switching frequencies. The main reason for this is to increase power density. Silicon MOSFET-based solutions are rapidly approaching their technology limits and are not capable of providing multi-MHz switching frequency for high current (>10A) applications. Gallium Arsenide (GaAs) field effect transistors (FETs) can switch much faster, enabling cost-effective, high-current, high switching frequency POL VRs. Recent advances in GaAs technologies have enabled the demonstration of 5MHz VRs and provide a path to even higher frequency (>50MHz) Power Supply in Package (PSiP) solutions. The high-speed power GaAs FETs are the “engine” to enable efficient high switching frequency POL VRs, but certain key elements must be designed appropriately to realize the desired performance. The gate driver and power path impedances must be minimized. To do this, a high level of integration is required, thus packaging is a critical element. New embedded die packaging solutions enable this high level of integration, dramatically reducing key parasitic impedances that can otherwise throttle performance, while also facilitating very compact multi-chip modules.|
|Greg J. Miller, Sr. Vice President - Engineering