Here is the abstract you requested from the IMAPS_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Source-sense packages for HV MOSFETs|
|Keywords: PACKAGE, MOSFET, THERMALS|
|In traditional 3-pin power MOSFET packages, the hard-switching transition speed is limited by the package source-inductance because the MOSFET drain current and gate current both share a path through the same package source inductance. The details of this mechanism are discussed and the resulting additional switching power loss caused by it is both measured and simulated. Proposed innovative|
|Anders Lind, Sr. Applications Engineer
Infineon Technologies North America Corp.