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Integrated Passive Devices and TSV, a disruptive technology for miniaturization.
Keywords: TSV , Passive Integrated Devices , capacitor
The 3D Silicon technology of IPDiA is a disruptive technology for miniaturization adopted by the best players in the Medical and Industrial segments for its outstanding performance and reliability demonstrated in harsh environments . The high density capacitors with multiple metal-insulator-metal (MIM) layer stacks in 3D structures reaching 250nF/mm2 already in production for several years is at the forefront of the research program where CEA-Leti and IPDiA are jointly providing innovative platforms for customers who want to combine these capacitors with Through Silicon Vias in order to demonstrate new technological concepts . The via last approach selected by IPDIA allows large possibility of integration combining TSV with active or passive devices such as High-density trench capacitors, MIM capacitors, Resistors, High-Q inductors or Zener diodes . In this paper , the interaction between TSV and IPD will be studied . Emphasis will be placed on the robustness of the 3D trench capacitor technology .Examples of applications using chip-to-chip interconnections through a passive TSV interposer in a 3D IC integration system-in-package (SiP) will be illustrated .
Catherine Bunel, R&D Director
IPDIA
CAEN , Calvados
France


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