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Development of laser and photo-definable toughened benzocyclobutene dielectric materials for 3D-TSV integration
Keywords: stress buffer layer, patternable dielectric , low copper drift
Three-Dimensional Integrated Circuits (3D-IC) based on Through Silicon Via (TSV) technology is a major driver for next generation of electronic devices, providing a viable pathway to increase device performance while reducing both power consumption and overall device package size. The adoption of 3D-TSV technology also requires the development of innovative interconnect solutions that reduce the size of signal routing and therefore impose new demands on dielectric materials used to isolate the copper interconnects. Benzocyclobutene polymers (Cyclotene™ Advanced Electronic Resins) have been used to isolate copper interconnects in packaging applications for more than 20 years, due in large part to the very low copper drift rate for this polymer platform. In addition, the BCB platform has a number of other attributes that make it attractive for new material development including a low cure temperature, low dielectric constant, low moisture absorption and proven reliability. The low fracture toughness and low elongation of BCB polymer has limited its use in stress buffer applications due to solder bump failure. This issue is addressed by recent improvements to benzocyclobutene polymer platform that result in greater than 25% elongation to break, enabling the development of both laser patternable and photopatternable toughened BCB materials. We will discuss the patterning and integration of these toughened benzocyclobutene materials along with their physical properties and processing conditions.
Dr. Zidong Wang, Senior Scientist
Dow Electronic Materials
Marlborough, MA
USA


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