Here is the abstract you requested from the IMAPS_2013 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A Study on the Effeectiveness of Underfill in the HBM with TSV|
|Keywords: High Bandwidth Memory, Underfill, Stress|
|HBM - High Bandwidth Memory - has 128GB/s bandwidth and construction of stacked memeory device with TSV - Through Silicon Via-. Stacked structure is basically composed of base die which has a logical circuit to control the memory cell and 4 high stacked memory devices. HBM package size is around 5 mm X 7mm, samllest form factor and attached to the Si interposer by micro bump joining. Also stacked DRAM dies have 20um diameter micro-bumps and underfill material for withstanding mechanical strength of stacked HBM structure. In this study, we investigate the stress evolution of underfill material to the thinned die of HBM, and also verify the environmental reliability of HBM.|
|Woong Sun Lee, Project Manager
Republic of KOREA