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|Ink-jet Printed Cu/Ag Memristor|
|Keywords: Memristor, Ink-jet printing, Flexible electronics|
|Memristors (memory resistor, resistive RAM, ReRAM) are considered as potential candidates to be used as non-volatile resistance switching memory cells due to their characteristic hysteretic behavior. Memristive behavior can be found in the literature dating back 10’s of years. But, after Hewlett-Packard labs physically achieved switching memristor based on thin film titanium oxide in the year 2008, an increasing number of memristors were built using various methods and materials. Ink-jet printed devices are becoming more promising and competitive because useful materials, including conductors, insulators and semiconductors, can be deposited on a wide range of substrates by ink-jet printing. Here, we present an ink-jet printed memristor (or ReRAM) based on silver and copper, which is fabricated on flexible polymer substrate, Kapton. We believe this is the first time Ag/Cu based memristors have been reported. Since it is fabricated on flexible polyimide, it has compatibility with inexpensive flexible electronic technologies. The device exhibits bipolar resistive switching (BRS) behavior while operating at a low voltage range less than +/- 1V. Compared to most previous devices that were fabricated on Si substrate, our memristor has advantage of being used as flexible memory devices. Moreover, this printed device has scalability for roll-to-roll processing. Our printed memristor has a metal-insulator-metal (MIM) structure. Silver nanoparticle ink was ink-jet printed and cured at low temperature as a seed layer. Copper was electroplated on the printed silver lines and followed by an oxidation process to create a thin oxide (CuO) layer on the Cu. Lastly, a second nanoparticle silver film was printed on top of the CuO and cured by ink-jet printing to form the MIM structure. The device is a two-terminal structure and the Cu/CuO/Ag stack has a minimum area of approximately 20um*20um. Compared to some previous devices, no forming step is needed to activate our devices. All measurements were done at room temperature in air. We have explored and will report the writing, reading, data persistence, and repeatability of these devices. The physical mechanisms occurring in these devices are currently being investigated in more detail and will be reported.|
Department of Electrical and Computer Engineering, Auburn University