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Characterization of AL-X Carbon Resistors
Keywords: carbon resistors, AL-X, embedded passive devices
Among the several spin-on dielectrics, AL-X possesses promising applications in microelectronics and packaging industries. These applications include the use in redistribution layers (RDL), planarization layers and wafer level packaging (WLP) [1–3]. This study focuses on lithographically patterned AL-X 2010, followed by carbonization, which defines resistive regions on a silicon dioxide layer. Carbonization of the AL-X surface is achieved by ion milling. The carbon thickness can be varied by ion milling time and selectively reduced by O2 plasma exposure. The AL-X resistive regions are electrically contacted via a layer of titanium/copper (1000A/2000A). For one particular structure, initial measurements exhibited three orders of magnitude difference in resistance when subjected to varying ion milling times. At two and five minutes of ion milling, resistances were measured at 2MΩ and 333kΩ respectively. These resistive structures demonstrate promise for use as embedded passive devices in 3D packaging technologies. This presentation will discuss the fabrication process for carbon resistors in AL-X and will show the resistances can be increased to measurement noise levels via O2 plasma cleaning. Additionally, the resistance of the carbonized AL-X layer is determined through current-voltage measurements. The thickness of this layer is determined using scanning electron and atomic force microscopy. The repeatability and reliability of this process is currently under study.
George A. Hernandez, Graduate Student
Auburn University
Auburn, AL
USA


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