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|Ferroelectric properties of BaTiO3 thin films on polycrystalline Ni substrate grown by polymer-assisted deposition after rapid thermal annealing|
|Keywords: Ferroelectric properties, BTO thin films, oxygen vacancies|
|With good dielectric, ferroelectric, piezoelectric, and magnetoelectric coupling properties, ferroelectric BaTiO3（BTO）thin films on polycrystalline nickel(Ni) substrates show potential applications in structural health monitoring systems, embedded capacitors and Micro-Electro-Mechanical Systems(MEMS), etc. However, deposition of oxide thin films on cheap metals generally suffers from the serious oxidation between films and substrates, due to the difficulties in controlling the interface. We demonstrated that BTO thin films can be successfully deposited on Ni foils by a chemical solution technique named polymer-assisted deposition (PAD), with a proper pretreatment of nickel foils in hydrogen peroxide solution. It is also found that a rapid thermal annealing (RTA) in oxygen would strongly affect the dielectric and ferroelectric properties of thin films. The correlation among the H2O2 pretreatment conditions, RTA conditions, and dielectric properties was systematically studied. Mechanisms of the leakage current were analyzed. It shows that the dielectric and ferroelectric properties of the BTO/Ni integrated thin films can be greatly enhanced by a well control of the interfacial layer and the oxygen vacancies in the BTO films. The results demonstrated the feasibility of using a chemical solution deposition technique to fabricate oxide ferroelectric thin films on cheap metal substrates.|
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science & Technology of China