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|RF-MEMS-Platform based on Silicon-Ceramic-Composite-Substrates|
|Keywords: low TCE LTCC, RF-MEMS-platform, SiCer|
|In the last few years, several low TCE LTCC materials have been developed for direct wafer bonding to silicon. BGK, a sodium containing LTCC was originally developed for anodic bonding of the sintered LTCC whereas BCT (Bondable Ceramic Tape) tailored for direct silicon bonding of green LTCC tapes to fabricate a quasi-monolithic silicon ceramic compound substrate. This so-called SiCer technique is based on homogeneous nano structuring of a silicon substrate, a lamination step of BCT and silicon and a subsequent pressure assisted sintering. We present a new approach for an integrated RF-platform-setup combining passive, active and mechanical elements on one SiCer substrate. In this context RF parameters of the silicon adapted LTCC tapes and the use of commercial metal pastes on BCT concerning bondability and solderability are investigated. We show first technological results of creating cavities at the silicon ceramic interface for SiCer-specific contacting options (e. g. exposed contact pads at the interface) as well as windows in the ceramic layer of the SiCer substrate for additional silicon processing (silicon backside thin film wiring, plasma etching etc.). A further investigated platform technology is deep reactive ion etching (DRIE) of the silicon-ceramic-composite-substrate. The etching behavior of silicon and BCT will be demonstrated and discussed. With the SiCer technique it is possible to reduce the silicon content at the setup of RF MEMS to a minimum (low signal damping). We present a procedure creating such a thin (< 100µm) crystalline silicon layer on the silicon adapted LTCC.|
Ilmenau University of Technology