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Self-assembly of CeO2 Nanocubes: an Approach for the Development of Resistive Random Access Memory Devices
Keywords: Nanocapacitor, Self-Assembly, Resistive random access memory
Nanocapacitors are the key component of resistive random access memory (RRAM) for next generation nanoelectronic devices. It is believed that bottom up approach is a cost effective technique compared with the other nanotechnologies. In this work, we report a new procedure to fabricate the high performance nanocapacitors by using oxide nanocubes as colloidal building blocks. The nanocubes of CeO2, which was synthesised with hydrothermal methodology, were used to build the monolayer and multilayer nanocapacitors through the capillary force assisted self-assembly approach. Such a synthesis results in a large area of high quality ordered structure with several square millimetres due to the narrow size and shape distributions of nanocubes in non-polar organic solvents. The as-fabricated nanocapacitors exhibited excellent resistive switching properties with very large ON/OFF ratios, good reliability and stability. These demonstrate the developed technique is a promising approach for the fabrication of next generation RRAM devices.
Sean Li, Professor
The University of New South Wales
Sydney, NSW

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