Here is the abstract you requested from the cicmt_2014 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|High-k Nanosheet Devices Fabricated from Solution-Based Layer-by-Layer Assembly|
|Keywords: Nanosheet, High-k capacitor, Layer-by-layer assembly|
|Nanocrystal technology is an emerging research area, with the goal of using nanomaterials as core device components. Here, we demonstrate a new approach for assembling ultrathin nanocapacitors using conductive and dielectric nanosheets as core device components. By engineering dielectric/electrode interfaces using solution-based assembly, we successfully fabricated an ideal metal-insulator-metal structure with an atomically sharp and clean interface. The resulting all-nanosheet capacitors exhibited a stable capacitance density (~27.5μF cm-2), which is 2,000 times higher than that of currently available commercial products. This work is a proof-of-concept, showing that high-performance capacitors can be made solely from oxide nanosheets, thus contributing to development of next-generation electronic devices.|