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High-k Nanosheet Devices Fabricated from Solution-Based Layer-by-Layer Assembly
Keywords: Nanosheet, High-k capacitor, Layer-by-layer assembly
Nanocrystal technology is an emerging research area, with the goal of using nanomaterials as core device components. Here, we demonstrate a new approach for assembling ultrathin nanocapacitors using conductive and dielectric nanosheets as core device components. By engineering dielectric/electrode interfaces using solution-based assembly, we successfully fabricated an ideal metal-insulator-metal structure with an atomically sharp and clean interface. The resulting all-nanosheet capacitors exhibited a stable capacitance density (~27.5μF cm-2), which is 2,000 times higher than that of currently available commercial products. This work is a proof-of-concept, showing that high-performance capacitors can be made solely from oxide nanosheets, thus contributing to development of next-generation electronic devices.
Minoru Osada,
Tsukuba, Ibaraki

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