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Co-fired AlN-TiN assembly as a new substrate technology for high temperature power electronics packaging
Keywords: substrate technology, AlN/TiN, high temperature
New wide-band gap semiconductors (SC) for power electronics such as SiC, GaN and diamond allow higher power densities, leading to higher operating temperatures [1, 2]. However, the surrounding materials also undergo a temperature increase, meaning that a parallel effort is needed in SC packaging technologies research. The substrate, which is one of the essential components, is used to electrically insulate the SC from the rest of the system, drain the generated heat and provide a path to connect the SC to the other elements [3]. Direct bonded copper and active metal-brazed substrates have limited temperature and cycling operation, owing to the large differences in the thermal expansion coefficients between the ceramics and the metals. In this work we propose a new and original substrate technology based on two co-sintered ceramics: aluminium nitride (AlN) and titanium nitride (TiN). To our knowledge, this 'all-ceramic' approach has never been developed for substrate technologies. As TiN is well known to be a conductive material [4] and AlN an insulating one [5, 6], the proposed structure could be used in a very large temperature range. The co-sintering is realized with the Spark Plasma Sintering (SPS) technique, ensuring both the quality of the interface and the compatibility of the materials. The principle of the elaboration and the characterization of this structure are described and discussed. The microstructure, the chemical compatibility and the electrical properties indicate that the proposed substrate could operate at a temperature above 200C the current substrate technologies, which makes it particularly attractive for high-temperature power electronics applications.
Sophie Guillemet-Fritsch, CNRS researcher
CNRS/university Paul Sabatier/ CIRIMAT
Toulouse, Haute Garonne

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