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|SiC Power Schottky diode for solar cell protection|
|Keywords: SiC Schottky diode, harsh environement electronics, Thermal stability|
|Silicon Carbide is foreseen as possible alternative to Silicon for integration of high temperature devices, especially for power electronics and digital circuitry. In this work, we have developed a 300V SiC power Schottky diode with capability to operate in a temperature range of -170Cº to +300ºC. The targeted application is solar cell string protection in solar panel of space modules. In this sense, we have performed a battery of qualification tests including HTRB, power steps stress at 270ºC, temperature steps stress up to 370ºC, DC bias stability tests at 280ºC during 4000h and 4000 thermal cycles -165/+275ºC, among others. The diodes passed all the qualification tests. An initial screening test phase has been also setup to eliminate infant mortality parts. Intrinsically, the developed SiC dies could withstand higher temperature thanks to the semiconductor and metallization selected for the technology optimization. The temperature operation limitation is mainly fixed by the package. The second parameter limiting the temperature operation is the Schottky metal barrier height, which define the maximum blocking voltage capability. We have extensively studied the impact of this Schottky barrier height on the reverse leakage currents at 300ºC, showing a clear correlation between barrier height and voltage capability for a given working temperature.|
|Dominique Tournier, Associate Professor
Université de Lyon, F-69622, Lyon, France ; INSA de Lyon ; CNRS, UMR5005, Laboratoire Ampère