Micross

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Here is the abstract you requested from the hitec_2014 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

High Temperature capable SiC Schottky diodes, based on buried grid design.
Keywords: SiC , Schottky diode, JBS buried grid
Abstract submitted as .pdf file to Brian Schieman/IMAPS: bschieman@imaps.org
Tomas Hjort,
Ascatron AB
Stockholm, Sweden
USA


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