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Experimental results of testing high-temperature high-current pulsed operation of SiC MOSFETs and SiC diodes
Keywords: Silicon Carbide, MOSFET, pulse
Using hot plate experiments testing to a maximum temperature of 200 degrees C, we performed tests to determine the maximum single pulse current allowable for Cree CMF20120D SiC MOSFETs and Cree C4D40120D Schottky diodes. Using single pulse switching of a resonant circuit, a half-sine shaped current pulse of 5 microsecond duration was used to test the devices. Criteria for maximum current was derived from a limit of 30% energy loss in the resonant pulse circuit. At 200 degrees C, maximum single pulse current was found to be 140 amp for the SiC MOSFET and about 500 amp for the SiC Schottky diode (both legs in parallel). We will report our findings as a function of temperature. We also report measurements of leakage current on the devices as a function of temperature, and will present measurements on a IGBT device of comparable current rating for comparison. Simple measurements of this type are a useful way of determining operational limits of SiC devices at temperatures that are not reported in the device data sheet.
Steven A. Morris, Scientist
Baker Hughes Inc.
Houston , Texas

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