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500°C Silicon Carbide MOSFET-based Integrated Circuits
Keywords: Silicon Carbide, Integrated Circuits, Operational Amplifier
GE Global Research is evaluating its silicon carbide integrated circuit technology at temperatures up to 500°C for oil and gas downhole applications. In this work, functional n-channel enhancement mode MOSFET along with operational amplifier and 27-stage ring oscillator have been designed, fabricated and packaged in dual-inline packages for testing with AuSn off-eutectic die attach and gold wirebonds. Silicon Carbide MOSFETs remained fully operational from room temperature to 500°C with stable I-V caharacteristics Also a 27-stage ring oscillator and an operational amplifier were tested and shown to be functional up to 500°C, with relatively small performance change between 300°C and 500°C. High temperature reliability evaluation of these circuits demonstrate stable operation and both the ring oscillator and opamp survived more than 100 hours at 400°C.
Cheng-Po Chen, Electrical Engineer
General Electric Global Research
Niskayuna, NY
USA


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