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A High Temperature (> 250 °C) SiC Schottky Diode Bridge Rectifier for Extreme Environment Applications
Keywords: High Temperature, Silicon Carbide, Diode Bridge Rectifier
A diode bridge rectifier is a fundamental circuit topology that provides the same polarity of output voltage regardless of the polarity of the input voltage which can be used in the conversion of input alternating current (AC) to an output direct current (DC). Due to the superior electrical and thermal characteristics of silicon carbide as compared to silicon, this circuit topology can be utilized in extreme environment, high temperature (> 250 °C) applications. A SiC-based approach will enable high temperature operation, zero forward/reverse recovery loss, high frequency operation, and low switching losses which contribute to a high reliability solution. In this work, a high temperature, 1200 V / 8 A SiC Schottky diode bridge rectifier packaged in a 4 pin TO-254 hermetically sealed package will be presented. The package consists of high temperature (> 250 °C) assembly processes and materials including the power substrate, die attach, and passivation. The forward voltage as well as the reverse leakage characteristics as a function of temperature will be presented. In addition, preliminary high temperature electrical bias reliability testing results consisting of high temperature DC reverse voltage bias, high temperature storage life, and high temperature DC forward current bias will be shown on this package.
Brandon Passmore, Sr. Electronics Research Packaging Engineer and Packaging Group Leader
Arkansas Power Electronics International
Fayetteville, Arkansas
USA


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