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500 °C operation of AlGaN/GaN and AlInN/GaN Integrated Circuits
Keywords: III-nitrides, HEMT, heterostructure
High-temperature technology platform has been developed utilizing planar III-nitride heterostructures approach. The record high electron concentration and mobility in 2DEG channel of III-nitride devices result in very high operation speed and are remarkably stable within a broad temperature range, allowing device operation above 500 °C. The developed IC technology is based on three key elements: (1) exceptional quality III-nitride heterostructure with very high carrier concentration and mobility that enables IC fast operation in a broad temperature range; (2) heterostructure field effect transistor approach that provides fully planar IC structure which is easy to scale and to combine with the other high temperature electronic components; (3) robust design with self-compensating 2DEG load resistors, advance metallization and high-k passivation/gate dielectrics, specially developed for high temperature operation. The feasibility of technology was demonstrated by modeling, design and fabrication of inverter and differential amplifier type of ICs using III-nitride heterostructures. IC’s performance was studied using wafer using probe station with heating chuck in ambient atmosphere. Temperature stability of structures with various barrier compositions was compared. At temperature exceeding 500 °C the developed ICs show the leakage currents below 10-7A, unit-gain bandwidth above 1 MHz and internal response time 45 ns.
M,Gaevski, Director of Electronics Division
Sensor Electronic Technology Inc.
Columbia, SC

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