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Assembly of a Integrated High-Power Amplifier
Keywords: GaN, New Power Amplifier, Assembly
Modern communication systems require higher frequencies and larger powers. The RF power amplifiers in the base stations building up these communication systems need to be able to handle these higher frequencies and provide the larger powers. Although the classical LDMOS transistors in these amplifiers fulfil the current needs of the base station manufacturers, many OEMs are looking at new technologies like GaN. This work gives a short introduction in the GaN technology as used by NXP Semiconductors and some new power amplifier concepts. Emphasises will be on the manufacturing challenges which come with these new amplifier concepts and the realisation of a Switch Mode High-Power Amplifier prototype.
Michel de Langen, Assembly Expert
NXP Semiconductors
Nijmegen, n.a.
The Netherlands


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