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Automated Eutectic Attachment Technology Studies in RF & Microwave Packages
Keywords: Eutectic attach, Power Amplifier, Automation
RF & Microwave package power packages continue to drive for higher performance and increased efficiency. While LDMOS Power Amplifiers continue as the largest market, GaAs and GaN Power Amplifiers are showing promise in delivering the performance and efficiency improvements needed for leading edge applications. Metallurgical attachment is the preferred method for achieving high thermal conductivity at the die to package interface. The transition from LDMOS to GaN devices is causing a shift from AuSi to AuSn attachments. The process flows and automation changes between these two eutectic connections should be considered carefully when making the transitioning to building these new leading edge GaN devices. A review of package typologies, tools, guidelines, and actual results will be shared in this paper.
Daniel D. Evans, Jr.,
Palomar Technologies, Inc.
Carlsbad, CA
USA


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