Here is the abstract you requested from the RF_2014 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A Wide Bandgap Discrete Package for High Performance, High Temperature Applications|
|Keywords: High Temperature, Power Electronics Packaging, Wide Bandgap|
|For modern power electronic systems to be competitive with existing technologies they must lie on the leading edge of performance – power density, switching speed, operating temperature, functionality, and efficiency must be increased to meet the specific needs of a broadening electronic marketplace. A high temperature, high performance discrete package was developed to exploit the advantages of wide bandgap semiconductors. The X-6 discrete power package is a high current capable (> 50 A), high temperature (> 225 °C), and low inductance package that can package wire bonded or wire bondless devices. Key features of this package include the flexibility to house a variety of device sizes and types, co-packaged antiparallel diodes, a terminal layout designed to allow rapid system configuration (for paralleling or creating half- and full-bridge topologies), and a novel wire bondless backside cooled construction for lateral GaN devices. Finite element modeling will be presented, which will show the design process, design tradeoffs, and critical design decisions that were fundamental for this high performance package. The electrical characteristics of both GaN and SiC die will be presented. Furthermore, to showcase the low parasitic design of the package and fast switching characteristics of wide bandgap devices, the efficiency as a function of output power of the X-6 package will be tested in a boost configuration.|
|Brandon Passmore, Sr. Electronics Research Packaging Engineer and Packaging Group Leader
Arkansas Power Electronics International