Here is the abstract you requested from the automotive_2015 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Keywords: AMB, Substrates, Silicon-Nitride|
|As Kyocera Silicon-Nitride Substrate has dense structure with less voids, superior in terms of high voltage/high insulation properties which are absolutely required for insulation substrate. The thermal conductivity is 58W/m.k which is about 3 times better than Alumium-Oxide. Further remarkable feature is high Flexural Strength (840MPa) which contributes the superior performance of temperature cycles. AMB substrate stands for Active Metal Bonding Substrate and the Kyocera original active metal brazing material makes the Cu-based traces and heat-spreader joint to the Silicon-Niteride substrate strongly and realize highly reliable operation at high temperature condition. Currently, the power module developments using next-generation power devices such as SiC and GaN is actively ongoing, Kyocera Silicon-Nitride substrate is being widely applied. Under the circumstance, internal routing technology with multi-layer and Cu via structure makes the module size reduction and great improvement on low inductance happen. Also, thick Cu structure makes better heat dissipation happen and Kyocera original brazing technology to combine external terminals makes the reduction of module components number happen. Kyocera AMB substrate is key component to support power module towards higher efficiency.|