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Towards High Temperature Intelligent Power Modules
Keywords: High Temperature Gate Drivers, SiC MOSFET, Intelligent Power Modules
This paper will describe CISSOID’s second generation of HADES® high temperature isolated gate driver, designed and qualified for operation from -55°C up to 225°C, and discuss how this new chipset will pave the way towards intelligent power modules (IPM’s) based on Silicon Carbide (SiC), and further down the road Gallium Nitride (GaN), fast-switching power transistors for use in high-density and high-reliability power converters. The paper will explain the integration strategy with respect to the first generation [1, 2] to build a new isolated gate driver solution able to drive a power leg based on only 3 high temperature integrated circuits (IC), few discrete devices and some passive components. It will discuss how the enhanced output sink or source current capability, up to 8 Amps at 225°C, make possible to drive a large range of power devices, from discrete transistors to 300A/1700V SiC MOSFET modules. Finally, the paper will highlight the benefits, in terms of performances, size and reliability, of moving the gate driver inside the power module to build SiC-based IPM’s. Indeed, putting the gate driver side to the SiC power transistors minimizes the parasitic inductances and enables faster switching. This means lower switching losses, less cooling requirements and smaller power converter size. Lower switching energies make possible to switch at higher frequencies leading to smaller filters and transformers. Moreover, having both the gate driver and the power switches in one box solves the integration challenge, minimizes design cycles and increases system reliability.
Pierre Delatte, CTO
Mont-Saint-Guibert, Brabant Wallon

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