Here is the abstract you requested from the HiTEN_2015 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Conduction mechanisms and structural analysis of 3D Slicon Capacitors|
|Keywords: Silicon Capacitor, Reliability, Stability|
|Most of the key players of the high temperature and high reliability world are willing to replace Ceramic capacitors by Silicon capacitors. On top of the miniaturization enhanced by this technology, based upon monolithic Silicon combined with advanced 3D topology, an excellent resistance to high vibration levels and mechanical shocks, high temperature up to 250°C and high pressure up to 1500 bar typical is exhibited. The high density capacitors have the advantage to be thin, stackable, they can be glued and wire bonded or soldered and they can be co-integrated with resistors in one piece of Silicon resulting in an integrated passive device. This paper will concentrate on conduction mechanisms and structural analysis of the oxide-nitride stacks in addition to the key reliability factors in order to explain why this technology is delivering unprecedented performance.|
|Catherine Bunel, R&D Director