Here is the abstract you requested from the HITEC_2016 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Electrical Performance of a High Temperature 32-I/O HTCC Alumina Package|
|Keywords: High temperature, Packaging, HTCC|
|Previously, a 96% polycrystalline alumina (Al2O3) based prototype packaging system with Au thick-film metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500°C. However, the 96% Al2O3 chip-level packages of this prototype system were not fabricated via an integrated commercial co-fired process, which is more suitable for large scale commercial production. In order to identify a co-fired ceramic material system for possible high temperature packaging applications, a selected high temperature co-fired ceramic (HTCC) alumina material was previously electrically tested at temperatures up to 550°C, and demonstrated better dielectric performance at high temperatures compared with the 96% alumina substrate used before, suggesting its use for future high temperature packaging applications. Platinum conductors with low thermal expansion were selected to further implement this co-fired alumina into a high temperature packaging system. This paper introduces a prototype 32-I/O (input/output) HTCC alumina package with platinum conductors for 500°C low power SiC electronics. The design of this package as well as its electrical performance, such as parasitic capacitance and parallel conductance of neighboring I/Os measured from 100 Hz to 1 MHz in a temperature range from room temperature to 500°C, will be discussed in detail. The parasitic capacitance and parallel conductance of this package in the entire frequency and temperature ranges measured are capped at 1.5 pF and 0.05 µS, respectively. SiC integrated circuits packaged using this co-fired chip-level package and compatible printed circuit boards have been successfully tested at 500°C for over 2600 hours continuously (Spry, Neudeck et al. 2016), and at 727°C for over 24 hours. Initial test results of packaged SiC circuits will be presented. This package is designed for long term testing of the new generation of SiC high temperature electronics that is currently in development at NASA Glenn Research Center.|
|Liang-Yu Chen, Senior Scientist
Ohio Aerospace Institute/NASA Glenn Research Center