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Ultra thin, low ESL and high frequency performance of high density silicon capacitors
Keywords: miniaturization, performance, silicon capacitor
The very high capacitance platform, now up to 900 nF/mm2, of the 3D Silicon capacitor technology presents many advantages for signal integrity, performance improvement and miniaturization. In this paper we will illustrate these advantages for communication infrastructure and high speed processors. The intrinsic IPDiA Silicon capacitors group delay, a key parameter in the phase sensitive broadband applications, will be compared with the multilayer ceramic capacitor (MLCC) one. The intrinsic construction and the simplified equivalent electrical models will be compared. We will also demonstrate how the Silicon capacitors are better candidates for performances, miniaturization and integration thanks to their low profile whereas the thickness is a limiting factor for Ceramic capacitors. On top of the competitive overview of performances specific to the Ultra Wide Broadband Capacitors like signal integrity, frequency response, linearity, dielectric absorption, the additional Silicon capacitor technology benefits will be detailed. Design recommendations will be given to those who want to optimize performances. Perspectives and roadmap for the future will be disclosed.
Franck Murray, CEO
IPDIA
CAEN, Normandy
France


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