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Glass IPD Substrate for 3D Solenoid Inductor Manufacturing, Assembly and Reliability
Keywords: Glass IPD, 3D Solenoid Inductor, TGV
In recent years, an IPD technology has been developed for passive components of baluns, couplers, splitters, filters and diplexers for radio frequency (RF) applications. Furthermore, an increasing interest and growth of RF microelectronic systems, especially for market-driven wireless and mobile communication handsets (mobile phones, integrated radios, GPS systems etc.) has been strongly demanding for smaller form factor, highly device integration and low-cost fabrication. Glass was chosen for the IPD substrate due to the advantages of large panel size availability, adjustable CTE, high modulus, low dielectric constant, low dielectric loss and high insulating nature. Furthermore, large panel, double-side without insulator TGV process and avoidance of CMP processes are expected to provide large number of substrates in each run compared with wafer processing and enable lower unit cost for the IPD substrate manufacturing. There are several methods to make solenoids included suspended air gap, vertical, and a horizontal solenoid from silicon BEOL processes. These approaches are not well-suited for making inductors desirable for high-Q RF applications. Now, there is an excellent opportunity to apply the insulating properties of the glass material and TGV technology for the 3D solenoid IPD substrate. It provides the cross-sectional area by virtue of the substrate thickness and as many turns as necessary in just two masking layers. This paper aims to integrate 3D solenoids inductor fabricated by using glass substrate with TGV technology. The key benefits of these evaluations are a competitive cost structure through 508mmx508mm glass panel IC (integrated circuit) substrate HVM (high volume manufacture) line. The characteristics results of TGV formation, 3D solenoids inductor process flow, silicon real device chip assembly integration and reliability evaluation results will be also investigated and presented.
Yu-Hua Chen,
Unimicron Technology Corp.
Hsinchu, Taiwan
Taiwan


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