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Positive photoresist development for fine RDL applications
Keywords: photoresist, RDL, chemically amplified
Despite the diminishing use of RDL in bumped chips (fan-in die bumping), RDL technology is employed in developing silicon interposers (3D integration), TSV applications and fan-in and fan-out WLP. Widespread applications of such technologies are being implemented in the production of miniaturized portable devices and lap tops. Several new positive i-line/broad band sensitive resist products are described in this paper. These products were developed to meet the increasing demands of RDL technology regarding resolution, aspect ratio and plating solution compatibility. The resist formulations presented in this work cover film thickness range from about 5µ to about 10µ. Aspect ratio of 1:5 or better are demonstrated, resolving 0.9µ at 5µ film thickness and 2µ at 10µ film thickness. Both chemically amplified (CA) and diazonaphthoquinone (DNQ) based platforms are presented. DNQ based resist (AZ® 5XT ) is designed for 3 - 5µ film thickness applications offering greater environmental stability than most CA resist platforms. Unlike high activation energy CA resists, DNQ resist can be processed without the need for a post exposure bake (PEB) step. Due to its high transparency, CA resist was developed for applications requiring 10µ or greater resist coating thickness (AZ® 3DT-102M). This resist was designed to produce foot free vertical profiles with excellent plating solution compatibility and acceptable environmental stability.
Medhat Toukhy, Sr staff scientist
EMD Performance Materials Corp.
Somerville, NJ
USA


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