Here is the abstract you requested from the polymers_2016 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Thick Film Aqueous Developable Photodielectric Material for Advanced Packaging Applications|
|Keywords: Photodielectric, Aqueous Developable , Fan-out Redistribution|
|Mobile devices continue to drive the requirements for the semiconductor industry especially with the current focus on integration of devices at the package level. This has led to the development of new packaging approaches including Package-on-Package, Fan-Out Wafer Packaging and System-in-Package which in turn drives the need for new materials. Some of the key drivers for these packages include the need to deliver higher functionality and increase interconnect density in a thinner package while reducing the overall packaging cost to the industry. Photoimageable polymeric dielectric materials play a key role in building these new wafer level packages (WLP); however thinner multi-die packages are driving additional requirements for improved higher lithographic performance and reduced copper diffusivity. In this work, we will introduce the development of Dow Electronic Materials' new thick film positive tone material, INTERVIA(TM) Photodielectric 7110 which meets many of the industry targets while maintaining the excellent copper barrier properties of previous generations of Dow's photodielectric products. This new 0.26N TMAH aqueous developable photodielectric has been designed to achieve improved lithographic performance at film thicknesses of up to 15 microns, allowing patterning of a 5um via in a 10um thick film corresponding to an aspect ratio of two to one. Good adhesion has been demonstrated for all aspects of the buildup processes. We have optimized the product to prevent pattern lifting during the development process and to maintain excellent adhesion of the photodielectric during the multilayer buildup process, after both cure and pressure cooker treatment, for a wide variety of materials including silicon oxynitride, silicon oxide, epoxy mold compound, electroplated copper, and itself. We will review the complete integration processing for this photodielectric material as well as its chemical, thermal, mechanical and electrical properties. Finally, we will discuss the reliability and validation results for this product which includes moisture saturation, solder reflow, copper electromigration, thermal cycle and drop tests. (TM)(R) Trademark of The Dow Chemical Company ("Dow") or an affiliated company of Dow.|
|Michael Gallagher, Principal Scientist
Dow Electronic Materials