Here is the abstract you requested from the RAMP_2016 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|A Novel Thermal Management Approach for Packaging of High Power GaN Devices|
|Keywords: thermal management, GaN, High Power|
|The thermal heat dissipation of high power GaN devices is one of the most important limiting factors in terms of their performance. Aluminum diamond material has been proven to effectively manage heat removal and spreading from GaN devices thanks to its high thermal conductivity in excess of 500 W/(m-K), while tungsten copper material has been traditionally used for large bases and complex shapes for hosting different devices. We present here the development of a new innovative solution where aluminum diamond parts are embedded inside tungsten copper bases: this advanced solution enables the improvements of the GaN device thanks to the presence of aluminum diamond material, but at the same time leverages the proven technology, complex shapes, and cost viability of traditional tungsten copper solutions.|