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Diamond Heat-Spreaders: Metallization, Shaping and Integration
Keywords: CVD diamond, Thermal conductivity, Modeling
Over the last 20 years, new methods of growth based on chemical vapor deposition (CVD) have been commercialized that allow for the cost effective growth of single crystal and polycrystalline diamond. These new methods of synthesis have enabled the exploitation of diamond’s optical, thermal, electrochemical, chemical and electronic properties. While the growth methods and material characterization of diamond has been extensively researched and reviewed, the practicality of incorporating diamond heat-spreaders in proper form-factor and into specific packaging schemes has been rarely discussed. This review focuses on the progress on how to extract more thermal benefit from diamond heat spreader through optimization of metallization -both for solder and through-vias connectivity- and discusses laser shaping, dicing and drilling of diamond heat-spreaders for better addressing today’s and tomorrow’s heat flux challenges. Presented data will demonstrate how incorporation of Cr would improve the thermal conductivity of the die-diamond attach compared to standard Ti-Pt stack by 4x, and how the overall thermal resistance is reduced by bringing the diamond in direct contact with the external heat sink. The impact of the new metallization scheme on the thermal management of high power devices will be discussed, and the results of an internal study on a large collection of small and large foot-print devices would confirm the suitability of the change to the new metallization. Results of junction temperature change for 4-finger (12%) and 90 finger (25%) GaN/SiC high power PAs will be presented and reviewed.
Firooz Faili, Thomas Obeloer, Program Manger
Element Six Technologies, USA
Santa Clara, California

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