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Thermal reliability of SiC device with Cu sintering die-attach processed at 250C in N2 gas
Keywords: Cu sintering paste, power device die-attach, high temperature reliability
Thermostable die-attach method alternative to soldering with Pb content is urgently required for utilizing wide-bandgap power semiconductors like SiC or GaN with a high maximum junction temperature TJ. Ag nano- or micro particle paste sintering attracts wide attention for this purpose, but Cu paste has also being developed mainly because of the cost pressure. Recently Cu sub-micron particle paste dispersed polyethylene Glycol solvent has demonstrated low temperature sintering at 250C in N2 gas, resulting in high strength of die-attach. In the present study, the developed Cu paste die-attach has accepted to SiC Schottkey barrier diode in TO-247 standard packaging with highly thermostable mold materials. The produced sample devices are subjected to high temperature storage tests at 250C and thermal cycling tests between -50C and 250C. The device including the novel die-attach structure exhibited excellent thermal stability. Furthermore, power cycling tests has been conducted, and the results appear prospective for long life time and high reliability with high TJ exceeding 250C. The presented study thus conclude that Cu submicron paste sintering is a promising candidate of power device die-attach usable for heavy industrial applications.
Shijo Nagao, Associate Professor
Osaka University
Ibaraki, Osaka

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