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A High Temperature Half Bridge 1200V/30A SiC MOSFET Intelligent Power Module in a hermetic package for Industrial & Aerospace Applications
Keywords: High Temperature Electronics, SiC MOSFET Gate Driver, SiC MOSFET Intelligent Power Module
Previous papers [1, 2, 3] have presented a high temperature isolated gate driver operating from -55°C to 225°C and discussed its benefits to build high reliability SiC-based Intelligent Power Modules (IPM’s), integrating both the gate driver and the power switches in a single package. In [3], we also presented a half bridge 1200V/30A SiC MOSFET module in a hermetically sealed metal package. This paper will explain how the previous developments have been pursued to build a new High Temperature Half Bridge 1200V/30A SiC MOSFET Intelligent Power Module (IPM) assembled in a 100mm by 33mm (3x1 inches) hermetic metal package. This IPM aims harsh environment applications like Oil&Gas well drilling or Aircraft engines and brakes, where the ambient temperature can be well above 200°C. The paper will explain the choices that have been made to design a compact, reliable and efficient solution for power converter and motor drive systems. Regarding the SiC power switches, the package design leverages on the experience gained with the assembly of high temperature discrete transistors and small power modules. A careful selection of materials was done to guaranty operation at high temperature and to minimize CTE mismatch in order to improve the robustness against thermal and power cycling. The IPM includes two 1200V/30A SiC MOSFET having On resistance of 45mOhms at 25°C and 75mOhms at 225°C. The thermal resistance is equal to 0.75°C/W for one switch. The embedded gate driver is based on HADES2 chipset implementing an isolated half-bridge gate driver: a primary side chip includes a PWM controller for the isolated Flyback DC-DC converter and an isolated signal transceiver for PWM and fault signals; two secondary side gate drivers chips drive the high and low side power switches. The isolation is provided thanks to a new high temperature transformer module including the power and the signal transformers [4]. The gate driver chips as well as the passive components around them have been laid out on a ceramic substrate in order to achieve compactness and reliability at high temperature. Moreover, the capacitors, used for decoupling or timing, and the resistors, used for filtering or current setting, have been carefully selected to provide a fully optimized and robust design for high temperature operation.
Etienne Vanzieleghem, VP Engineering
CISSOID S.A.
Mont-Saint-Guibert, Brabant Wallon
USA


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