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High Temperature EEPROM Using a Differential Approach for High Reliability
Keywords: High Temperature, EEPROM, SOI CMOS
Various applications require storage of program code or calibration data inside a non-volatile memory. In many cases data is programmed one time e.g. during initial test or calibration and needs to be stored and readable over the whole lifetime of a product. The expected lifetime is a few thousand hours to ten years or even more dependent on the application. Due to its ease of use and reprogramming capability EEPROM based memories are very common in this field in comparison to e.g. fuses which are only one time programmable. High reliability especially with respect to data retention is the main constraint for these non-volatile memories. Considering the degrading mechanisms which are mainly accelerated by thermal energy, storage and operation temperature have a strong impact on EEPROM reliability. Especially at very high temperatures up to 250°C data retention is limited to a few thousand hours or less with further increase of temperature, which makes EEPROM hard to use as a long time non-volatile memory. Nevertheless the increasing complexity of high temperature electronics and its use in high temperature applications like data acquisition systems demands for reliable non-volatile memories. Fraunhofer IMS has developed a high temperature EEPROM following a differential approach to further increase the reliability of EEPROM especially with respect to data retention. The circuitry has been realized in the Fraunhofer IMS 0.35 Micron high temperature SOI-CMOS technology. In this contribution we will discuss aspects of high temperature EEPROM architectures and the pros and cons of the proposed differential approach. The realized circuitry as well as the the measurement results will be presented.
Holger Kappert,
Fraunhofer Institute for Microelectronic Circuits and Systems IMS
Duisburg, NRW
Germany


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