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A High Temperature 4H-SiC Reference Voltage Generator
Keywords: High temperature reference voltage generator, 4H-SiC , High temperature electronics
High temperature electronics are highly demanded in many applications such as downhole, automobile, and aerospace. In these application, electronic circuits are required to operate reliably without the use of bulky cooling systems which are currently needed to protect electronics from the extreme environment. The current electronics used in these systems are made from Silicon (Si) which suffer from high leakage current at high temperature. Silicon Carbide (SiC), on the other hand, offer high breakdown voltage and low leakage current. These features are mainly attributed to the wide bandgap property of SiC which make it suitable for high temperature applications. This paper presents design of a high temperature reference voltage generator using the commercial-of-the-shelf (COTS) 4H-SiC transistors. The proposed voltage generator is based on Widlar bandgap reference topology and designed to provide temperature-independent and supply-independent reference signal to a gate driver. Measurement results show that the proposed reference voltage generator provides a negative voltage reference of -3.23V with a low temperature coefficient (TC) of 42 ppm/°C at temperature range from 25 °C to 250 °C. The design also provides reliable performance at different supply voltages. The proposed design dissipates 2.4 mW from -8 V supply voltage.
ZiHao Zhang , Student
Virginia Tech
Blacksburg, VA
USA


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