Honeywell

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A Wafer-Bonding Method for Fabricating Integrated GaAs Schottky Varactor Multipliers on Silicon Platforms
Keywords: Wafer Bonding, Terahertz, Schottky Diode
A major limitation to the implementation of broadband millimeter-wave and terahertz test instruments is the bandwidth of typical interconnects and packaging approaches used at these frequencies. Recent developments in both micromachined waveguide probes based upon silicon-on-insulator (SOI) processing as well as heterogeneous integration of GaAs Schottky diodes onto silicon substrates using wafer-bonding techniques provide a vehicle for developing broadband circuits and measurement instruments that overcome this limitation. The work described in this paper focuses on the development of frequency multiplier sources to be used as signal sources for testing broadband planar components. These multiplier sources are realized using heterogeneous integration methods to fabricate GaAs Schottky diodes that are bonded to micromachined silicon substrates. The process used to fabricate the diodes and integrated multipliers consists of initially forming an ohmic contact on highly-doped GaAs, followed by a transfer of the epitaxy whereby the ohmic metal contact is bonded to a host silicon substrate using an intermediate adhesive layer (SU-8 photoresist). Following this transfer of epitaxy, most of the GaAs is removed through wet and dry chemical etching, leaving mesas upon which the diode and associated circuitry are formed. Characterization of diodes and circuits is accomplished with DC measurements and s-parameter measurements in the 325-500 GHz frequency range.
Robert M. Weikle II, Professor
University of Virginia
Charlottesville , VA
USA


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