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Laser Full Cut Dicing of Thin Si IC wafers
Keywords: Dicing, Laser, Thin wafer
In this paper we will reveal the results achieved for the three different laser ablation based dicing technologies. It covers nano second UV laser based on the V-DOE process (patented), a multi beam short pulse (femto second) laser dicing process (patent pending) and a multi beam nano second UV laser based process followed by a plasma etching process (patented). For each dicing technology we will demonstrate the results over various inspection technologies (Visual Microscope, SEM, TEM and Raman Spectroscopy). For each technology we also will provide die strength data and assembly data results achieved for various applications (memory, power). In addition to the results we will also report the influence on process window based on a variety of process parameter studies. The results will demonstrate that for a laser based dicing process a die strength level of over 1000MPa is achieved for wafers from 30um thickness up to 200um thickness. Wafers have been diced which include up to 30um ILD and metal stacks on the front side in the dicing street as well as 10um of Cu back side metallization. Finally a cost comparison of the three singulation processes is done and benchmarked against other wafer separation technologies such as SDBG, Plasma dicing and laser groove + blade saw.
Jeroen van Borkulo, Product Marketing Manager
ASM Pacific Technologies
Beuningen, Not Applicable

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