Here is the abstract you requested from the HITEC_2018 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.
|Development of Conductive Fusion Technology|
|Keywords: Low Processing Temperature, 250C Operating Temperature, High Thermal Conductivity|
|Keywords: Sintered Silver; Low Modulus; Thermals. Abstract High power semiconductor applications require a die attach material with high thermal conductivity to efficiently release the heat generated from these devices. Current die attach solutions such as eutectic solders and high thermal conductive silver epoxies and sintered silver adhesives have been industry standards, however may fall short in performance for high temperature or high stress applications. This presentation will focus on development of a reinforced, sintered silver die attach solution for high power semiconductor applications with focus on a pressure-less, low temperature sintering technology that offers high reliability for high temperature (250°C) applications. The electronic, optoelectronic, and semiconductor industries have the need for high performance adhesives, in particular, high power devices require low-stress, high thermal conductivity, thermally stable, and moisture resistant adhesives for the manufacture of high reliability devices. This paper introduces a new reinforced sintered silver adhesive based on the “resin-free” Conductive Fusion Technology. The high performance adhesive offers a robust solution for high temperature, high reliability applications. Conductive Fusion Technology consists of a high thermal conductivity silver component blended with a non-conductive, low-modulus powder component. The non-conductive powder component comprises an organically modified inorganic material that exhibits excellent thermal stability at temperatures exceeding 250°C. Properties of the sintered silver adhesive, such as storage modulus, can be modified by varying the content of the non-conductive component.|
|Maciej Patelka, Engineer
San Jose, CA