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Here is the abstract you requested from the imaps_2018 technical program page. This is the original abstract submitted by the author. Any changes to the technical content of the final manuscript published by IMAPS or the presentation that is given during the event is done by the author, not IMAPS.

Ultra Fine RDL Formation using an Alternative Pattering Solution for Advanced Packaging
Keywords: Fan out wafer level packaging, Excimer laser ablation, Dual damascene RDL formation
Fan-Out technologies continue to be the main driver for advanced packaging, be it on wafer level (FOWLP) or panel level (FOPLP). Two principal integration platforms were used for FOWLP or FOPLP and represented by chip last or chip first. The most critical process step for each integration platform is the patterning of Cu interconnects in most efficient and reliable manner. In this paper, we propose a novel patterning process that uses excimer laser ablation to integrate via and RDL traces in one patterning step, followed by seed layer deposition, plating and planarization. Novel plating process that eliminates planarization will be demonstrated. We will present electrical and reliability data of Via and RDL traces patterned by excimer laser in different dielectric materials. The commercial benefits of the new laser based patterning process as compared to the current process of record (POR) will be highlighted.
Habib Hichri,
SUSS MicroTec Photonic Systems Inc
Corona, California
USA


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