Honeywell

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Integrating a Low Cure Dielectric Material into Panel and Wafer Level Manufacturing Process
Keywords: fan-out, low T Cure, advanced RDL
Demand on high density interconnects is increasing with the emergence of fan-out architecture along with heterogeneous integration of devices requiring new generation of organic dielectric materials capable of printing sub-10 micron vias while controlling warpage on organic substrates. Conventional organic dielectric materials requiring high cure temperature suffer from high shrinkage during cure can exert a lot a warpage and cause significant die shift. We report a novel polyimide based dielectric material that can be processed at temperature below 180˚C. The dielectric material exhibits low thermal shrinkage of below 5% and residual stress of around 10 MPa that makes it an ideal candidate for panel level processing where control of warpage is extremely important. The stress behavior over the temperature was analyzed. The photoimageable material is capable of printing vias that can support aspect ratio of over 2:1 under different exposure conditions including i-line, broadband, laser direct imaging and excimer laser. Material is based on non-corrosive chemistries to prevent corrosion on sensitive metals like aluminum and copper. In this paper, we will report progress in demonstrating fabrication of multi-layer RDL on an EMC based panel with embedded aluminum dies. We will present electrical properties together with mechanical and thermal reliability data of via and RDL traces. The second level reliability will be presented after thermal storage (-55 to 125°C) and drop test. The copper compatibility is proven by biased thermal storage of polymer embedded copper interdigital structures.
Markus Wöhrmann,
Fraunhofer IZM - Department WLSI
Berlin, Berlin
Germany


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