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Converter-Level Integration for Wide Band-Gap Automotive Power Electronics
Keywords: Converter in Package, 3D-Integration, Power Electronics
Wide band-gap semiconductors offer many potential benefits to designers of power electronic systems. Lower switching losses allow operation at higher switching frequencies, which in principle allows a reduction in passive component values in many converter applications. However, efficient operation at higher switching frequencies requires increased voltage and current transition rates. Currents induced through parasitic capacitances, as a result of high dv/dt and voltages induced in parasitic inductances, as a result of high di/dt, can both be expected to be higher with WBG devices. With conventional packaging and circuit construction, the resulting transient voltage spikes and ringing will add to the electromagnetic interference (EMI) emitted from the system. Additionally, the typical design of power module substrate results in a relatively high capacitance from the switching node to the module baseplate and hence to ground if, as is typical, the module is mounted on a grounded, metal heatsink. This can lead to unacceptable levels of common mode current flow. To mitigate these effects in conventional modules, the switching speeds of WBG devices are often limited by introducing additional gate resistance. Outside the commutation cell, fast voltage transitions may lead to unacceptably high levels of conducted and radiated EMI, so approaches involving the local filtering of converter outputs are attractive. Here we examine the design and realisation of “Converter-in-Package” (CiP) modular blocks for system power levels from 100s W to 100s kW, incorporating individual commutation cells with close-coupled gate drives, input/output filtering and electromagnetic screening/shielding.
C Mark Johnson,
University of Nottingham
Nottingham, Nottinghamshire

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