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Wafer level submillimeter-wave radar with integrated lens antenna for 5G application.
Keywords: Wafer Bonding, 3D integration, submm-wave array
A novel approach for millimeter-wave radar is presented. Key building blocks of a super-compact low-mass millimeter-wave radar is demonstrated by utilizing wafer level 3D integration of GaAs diodes, silicon manufacturing, and CMOS 3-D chip architectures integrated with low temperature co-fired ceramic (LTCC) antenna substrates. This technology will drastically reduce mass and volume i.e. significantly increase pixel counts and lower cost. The majority of deployed heterodyne instruments have been in single Pixel. The conventional approach of building single-pixel receivers and stacking them to assemble multipixel array receivers is not suited at terahertz frequencies. Apart from being bulky, complicated, and prohibitively expensive, the brute force stacking of single pixel receivers into 2-D arrays has the drawback that the pixel-to-pixel spacing is dictated by the physical size of each pixel. Even though the antenna feeds can be placed tightly, the size of the front-end components ultimately force larger pixel spacing and hence poor focal plane sampling. Therefore, a new focal plane array architecture is needed which is modular, ultracompact, and easy to fabricate which by lithographic techniques—to build multipixel heterodyne array receivers where the majority of the frontend components along with the antenna element can be integrated in a small form factor. Our technology will integrate all in wafer scale which will significantly increase pixel counts with significantly lower cost.
Rafi Islam, PhD, Chief Technology Officer
Cactus Materials, Inc.
Tempe, AZ
United States

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