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Bonding strength of Cu/Cu joints using sintering process of micro-sized Cu particles for high-temperature application
Keywords: Sintering process, Micro-sized Cu particles, High-temperature application
As a recent trend, the silicon carbide (SiC) is of particular interest for semiconductor device. The SiC power device provides the possibility to develop the next-generation power conversion circuit with high efficiency and high power density. Compared with the conventional silicon (Si) device, the SiC device can operate with significant lower power loss and higher operating temperature, which contributes to miniaturization and higher performance of power modules. To assemble these power modules, the high temperature packaging technology such as die attach process is needed. As a die attach process, the joining process using a nanoparticle paste has been proposed as an alternative to establish a new bonding process for high-temperature applications. However, nanoparticles paste has some problems for practical use. Recently, we have proposed a simple oxidation-reduction bonding (ORB) process to achieve good Cu- to-Cu joints using micro-sized Cu particles. In this study, a feasibility study was conducted to determine whether micro-sized Cu particles can be used for bonding material, and the shear strength of the Cu-to-Cu joints was investigated. Then, the interfacial microstructure of the joints using the micro-sized particle paste was examined. As a result, the bonding using micro-sized Cu particles was successfully achieved and the shear test results showed that the joints by ORB process had a shear strength of around 30 MPa.
Hiroshi Nishikawa, Professor
Osaka University
Ibaraki, Osaka
Japan


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