Registration
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MASH Program | MASH Tabletop Exhibit Info
Wednesday, April 30th
Registration: 7:00 am - 5:00 pm
Exhibit Hours: 10:00 am - 3:00 pm
Plenary Talk (Joint MASH & Advanced Substrates)
11:30 am - 12:15 pm
Chair: Sanju Gupta, University of Missouri-Columbia
Title: Nanoscale Thermoelectric Materials and Devices for Thermal Management and Energy Harvesting
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Speaker: Rama Venkatasubramanian, RTI International and Nextreme Inc. Founder
Co-author: Lewis M. Cohn, Program Manager, Defense Threat Reduction Agency
Dr. Rama Venkatasubramanian, Nextreme, Inc. founder, is currently Director of the Center for Thermoelectric Research at RTI International. He served as CTO of Nextreme, Inc. in its first year of founding as it transitioned from RTI labs to the commercial space. Rama is well known for pioneering thermoelectric superlattice materials and device developments over the past decade. He is a recipient of the Allen B. Dumont Prize at Rensselaer Polytechnic Institute, RTI’s Margaret Knox Excellence Award in Research (2002), the R&D 100 Award (2002), and the Eastern North Carolina IEEE Inventor of the Year (2003). He has five patents issued in thermoelectrics and has over 100 refereed publications. Rama obtained his PhD in Electrical Engineering from RPI. He is a National Talent Scholar and a graduate of Indian Institute of Technology in Madras, India. |
Lunch Break in Exhibit Hall: 12:30 pm - 2:20 pm
(Lunch served from 12:30 pm to 1:30 pm)
Opening Remarks and Introduction: 2:20 pm - 2:30 pm
Technical Co-Chair: Sanju Gupta, University of Missouri-Columbia
Technical Co-Chair: Susan Trulli, Raytheon RF Components
Session 1: III-Nitrides and SiC Substrates
Session Chair: Sanju Gupta, University of Missouri-Columbia
2:30 pm - 5:15 pm
Thermal Benefits of Native GaN Substrates
Andrew D. Hanser, E. A. Preble, L. Liu, K. R. Evans, Kyma Technologies, Inc.; B. K. Wagner, H. M. Harris, Georgia Tech Research Institute
Advanced Substrates for AlGaN/GaN HEMTs
Yvon Cordier, Nicolas Baron, Mohamed Azize, Marc Portail, Marcin Zielinski, Thierry Chassagne, CRHEA-CNRS
Break in the Foyer: 3:30 pm - 3:45 pm
4H-SiC Power Devices - Current Progress and Technical Issues
Sei-Hyung Ryu, Brett A. Hull, Mrinal K. Das, Qingchun Zhang, Sarit Dhar, Sarah K. Haney, Charlotte Jonas, Craig Capell, Len Hall,
Jim Richmond, Robert Callanan, Fatima Husna, Anant Agarwal, Cree, Inc.
Current Status of SiC Power Devices and Power ICs
Jian H. Zhao, SiCLAB, Rutgers University
Integration of Vertical and Electrically-Isolated III-V Nanowires on Insulator on Silicon
Shadi A. Dayeh, Yi Jing, Peng Chen, Edward T. Yu, Deli Wang, S. S. Lau, University of California - San Diego
Thursday, May 1st
Registration: 7:00 am - 5:00 pm
Continental Breakfast: 7:30 am - 8:00 am
Hotel serves continental breakfast for registered guests at 7:30 am in the cafeteria.
Plenary Talk: 8:00 am - 8:45 am
Chair: Susan Trulli, Raytheon RF Components
Title: Nanostructured Thermoelectric Materials For Solid-State Cooling
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Speaker: Gang Chen, Massachusetts Institute of Technology
Dr. Gang Chen is currently the Warren and Towneley Rohsenow Professor at Massachusetts Institute of Technology. He obtained his Ph.D. degree from UC Berkeley in 1993. He taught at Duke University (1993-1997) and University of California at Los Angeles (1997-2001) before moved to MIT in 2001. He is a recipient of the NSF Young Investigator Award, a Guggenheim Fellow, and an ASME fellow. He has published extensively in the areas of nanoscale energy transport and conversion and nanoscale heat transfer. He serves on the editorial boards of five journals in heat transfer and nanotechnology and chairs the ASME Nanotechnology Institute Advisory Board. |
Session 2: Diamond Substrates
Session Chair: Jerry Zimmer, sp3 Diamond Technologies
8:45 am - 10:15 am
Progress in GaN-on-Diamond Wafer Technology
John Wasserbauer, D. Francis, F. Faili, D. Babic, F. Ejeckam, Group4 Labs
Advances and Challenges in Large Diameter Silicon on Diamond Substrates
Jerry W. Zimmer, sp3 Diamond Technologies
Diamond MEMS
John A. Carlisle, N. Moldovan, N. Neelakantan, C.F. West, Advanced Diamond Technologies, Inc.
Break: 10:15 am - 10:30 am
Session 3: Processing/Applications
Session Chair: David Saums, DS&A LLC
10:30 am - 12:00 pm
Fabrication of High-Density Substrates for Advanced 3-D Integrated Modules
Michael T. Khbeis, Peter A. DiFonzo, Kevin Moores, John Bolger, US Department of Defense; George Metze, Laboratory for Physical Sciences
Nano-Structured Diamond for DNA Sensing
Nianjun Yang, Hiroshi Uetsuka, Jiuhong Yu, Takatoshi Yamada, Christoph E. Nebel, National Institute of Advanced Industrial Science and Technology (AIST)
Heterogeneous Integration of III-V on Silicon Photonic Integrated Circuits
S.J. Ben Yoo, University of California, Davis
Lunch: 12:00 pm - 1:00 pm
Session 4: Advanced Packaging
Session Chair: Susan Trulli, Raytheon RF Components
1:00 pm - 4:45 pm
Challenges in Matching Die to Package CTEs for High Thermal Flux Devices
Jerry W. Zimmer, Gerry Chandler, sp3 Diamond Technologies
Thermal Management and Packaging with Diamond Composites
Ravi Bollina, Sven Knippscheer, Janet Landgraf, Tobias Mrotzek, Hannes Wagner, Plansee SE, Austria
A Local, Reactive Heat Source for Room Temperature Soldering of High Power Devices to Substrates
D. Van Heerden, R. Vincent, Z. He, G. Diaz, Reactive NanoTechnologies, Inc.
Break: 2:30 pm - 2:45 pm
(Served in room and will remain throughout the Panel Discussion.)
Integrated Carbon Nanotube Films in Thermal Management
Robert Vajtai, Xiaohong An, Rensselaer Politechnic Institute; Géza Tóth, Krisztián Kordás, Infotech/ University of Oulu; Pulickel M. Ajayan, Rice University
Next Level Integration
Andrew Smith, Interconnect Systems Inc.
Panel Discussion on Emerging Trends in Advanced Substrates and Packaging
3:45 pm - 4:45 pm
Moderator: Jerry Zimmer, sp3 Diamond Technologies
An expert panel will address global and emerging trends in the areas of advanced substrates and next generation semiconductors as viable platforms for multiple technologies with a concurrent focus on microelectronics and packaging issues. These next-generation semiconductors will have considerable impact on the US and world electronics industries. The panel will discuss key issues including novel substrates and semiconductors, process development, heterogeneous integration, large-scale manufacturing, packaging and novel applications or whatever may come on-site during the questionnaire from attendees, which is at the forefront of the marketplace.
Featured panelists include:
Dr. Rama Venkatasubramanian, RTI International and Nextreme Inc. Founder
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Dr. Gang Chen, Massachusetts Institute of Technology
Additional panelists will be invited.
Closing Remarks: 4:45 pm
Workshop Chairs
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